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About us - Prof. Aleksander Wrobel
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Aleksander M. WROBEL, Prof. dr., Professor, Head of research group
Affiliation:
Department of Engineering of Polymer Materials
Tel.: +(48-42)-680-3-203, fax: +(48-42)- 684 71 26
e-mail: amwrobel@bilbo.cbmm.lodz.pl
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1969
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PhD degree in technical science, Technical University of Lodz
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1972
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Postdoctoral stay at the University of Liverpool in the group of Prof. C. H. Bamford
Centre of Molecular and Macromolecular Studies, Department of Polymer Physics headed by Prof. M. Kryszewski
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1977-1978
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Fellow at Ecole Polytechnique of Montreal
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1985
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Habilitation in chemistry (formation of thin films by low-temperature plasma polymerization of organosilicon compounds),
Technical University of Lodz. Then he developed the remote plasma chemical vapor deposition process for the formation of
high quality silicon-based thin films
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1986-1987
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Visiting professor at Ecole Polytechnique of Montreal
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1989, 1990
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Invited fellow at Tubingen University
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1992-1993 and 1996
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Visiting professor at Shizuoka University
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2001
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Title of Professor in chemistry
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2002
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Professor position at Centre of Molecular and Macromolecular Studies
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Member of editorial boards:
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Plasmas and Polymers (Kluwer/Plenum),
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Journal of Wide Bandgap Materials (Technomic)
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1979 and 1983
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Team-awards of the Secretary of Polish Academy of Sciences
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Formation of amorphous silicon-based superhard and high wear resistance thin-film materials, such as: silicon carbide a-Si:C:H
and silicon carbonitride a-Si:N:C:H by the remote plasma chemical vapor deposition from organosilicon single-source precursors.
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Kinetics and chemistry of film formation process.
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Morphological and chemical structure of the deposited films.
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Mechanical and optical properties of the films.
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Film structure - property relationships.
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A. M. Wrobel, M. R. Wertheimer
Plasma-polymerized organosilicons and organometallics,
in: Plasma Deposition, Treatment, and Etching of Polymers,
R. d'Agostino, ed., Academic Press, Boston 1990, Chapter 3, pp 163-268
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A. M. Wrobel, S. Wickramanayaka, Y. Nakanishi, Y. Fukuda, Y. Hatanaka
Remote hydrogen plasma chemical vapor deposition of amorphous hydrogenated silicon-carbon films
from an organosilane molecular cluster as a novel single-source precursor:
Structure, growth mechanism, and properties of the deposit
Chem. Mater., 7, 1403-1413 (1995)
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A. M. Wrobel, W. Stanczyk
Mechanism of the activation of 1,1,3,3-tetramethyl-1,3-disilacyclobutane in plasma chemical vapor deposition
Chem. Mater., 6, 1766-1770 (1994)
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M. Wrobel, S. Wickramanayaka, Y. Nakanishi, Y. Hatanaka, S. Pawłowski,
W. Olejniczak
Atomic hydrogen-induced chemical vapor deposition of a-Si:C:H thin-film materials from alkylsialne precursors
Diamond Relat. Mater., 6, 1081-1091 (1997)
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A. M. Wrobel, A. Walkiewicz-Pietrzykowska
Mechanism of the initiation step in atomic hydrogen-induced CVD of
amorphous hydrogenated silicon-carbon films from single-source precursors
Adv. Mater. CVD, 4, 133-141 (1998)
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M. Wrobel, A. Walkiewicz-Pietrzykowska, S. Wickramanayaka, Y. Hatanaka
Mechanism of amorphous silica film formation from tetraethoxysilane in atomic oxygen-induced chemical vapor deposition
J. Electrochem. Soc., 145, 2866-2876 (1998)
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A. M. Wrobel, S. Wickramanayaka, K. Kitamura, Y. Nakanishi, Y. Hatanaka
Structure-property relationships for amorphous hydrogenated silicon-carbon films produced by
atomic hydrogen-induced CVD from single-source precursor
Adv. Mater. CVD, 6, 315-322 (2000)
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M. Wrobel, A. Walkiewicz-Pietrzykowska, M. Stasiak; J. E. Klemberg Sapieha,
D. M. Bielinski
Remote microwave plasma chemical vapor deposition of thin Si:N:C films from single source precursor
J. Wide Bandgap Mater., 8, 3-15 (2000)
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M. Wrobel, A. Walkiewicz-Pietrzykowska, Y. Hatanaka, S. Wickramanayaka,
Y. Nakanishi
Oligomerization and Polymerization Steps in Remote Plasma Chemical Vapor Deposition of Silicon-Carbon and Silica
Films from Organosilicon Sources
Chem. Mater., 13, 1884-1895 (2001)
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A. M. Wrobel
Remote hydrogen plasma chemical vapor deposition from alkylsilane and alkylcarbosilane single-sources:
Mechanism of the process and properties of resulting silicon-carbon deposits
J. Phys. IV France, 11, Pr 3 691-702 (2001)
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