Scientific career:
1969 –  PhD degree in technical science, Technical University of Lodz
1972 –  Postdoctoral fellow at the University of Liverpool in the group of Prof. C. H. Bamford (FRS)
1973 –  Centre of Molecular and Macromolecular Studies, Department of Polymer Physics
headed by Prof. M. Kryszewski
1977-1978 –  Fellow at Ecole Polytechnique of Montreal
1985 –  Habilitation in chemistry (Formation of thin films by low-temperature plasma polymerization of organosilicon   compounds), Technical University of Lodz. Then he developed the remote plasma chemical vapor deposition process for  the formation of high quality silicon-based thin films
1986-1987 –  Visiting professor at Ecole Polytechnique of Montreal
1989, 1990 –  Invited fellow at Tubingen University
1992-1993 –  Visiting professor at Shizuoka University
and 1996
2001 –  Title of Professor in chemistry
2002-2014 –  Professor position at Centre of Molecular and Macromolecular Studies

Member of editorial boards:

1992-1998        Journal of Chemical Chemical Vapor Deposition (Technomic Publishing)
1998-2004       Plasmas and Polymers (Kluwer Academic-Plenum Publishers)
1999-2002       Journal of Wide Bandgap Materials (Sage Publications)
2004-2006      Plasma Processes and Polymers (Wiley-VCH)
2009-2012       International Journal of Biomedical Engineering and Consumer Health Informatics
(Ser. Publications)
2004-2015       Chemical Vapor Deposition (Wiley-VCH)
2016-2020       Advanced Materials Interfaces (Wiley-VCH)
2009-                Applied Organometallic Chemistry (Wiley)

Awards:

1979 and 1983    Team-awards of the Secretary of Polish Academy of Sciences

Research area:

  • Formation of amorphous silicon-based superhard and high wear resistance thin-film materials, such as: silicon carbide a-SiC:H and silicon carbonitride a-SiCN:H, and silicon oxycarbide a-SiCO:H by plasma induced chemical vapor deposition methods using organosilicon compounds as single-source precursors.
  • Kinetics and chemistry of film formation process.
  • Morphological and chemical structure of the deposited films.
  • Mechanical and optical properties of the films.
  • Film structure – property relationships.

Selected references:

A. M. Wrobel*, P. Uznanski
Amorphous silicon carbonitride a-SiCN thin film coatings by remote plasma chemical vapor deposition using organosilicon precursor: Effect of substrate temperature
Plasma Process. Polym. 2022, e2200190, 1-19

A. M. Wrobel*, P. Uznanski
Amorphous silicon carbonitride a-SiCN thin film coatings by remote plasma chemical vapor deposition using organosilicon precursor: Effect of plasma composition
Plasma Process. Polym. 2022, e2200154, 1-15

A. M. Wrobel*, P. Uznanski
Hard silicon carbonitride thin-film coatings procedures by remote hydrogen plasma chemical vapor deposition using aminosilane and silazane precursors. 2: Physical, optical and mechanical properties of deposited films
Plasma Process. Polym. 2021, e2000241, 1-15

A. M. Wrobel*, P. Uznanski
Hard silicon carbonitride thin-film coatings procedures by remote hydrogen plasma chemical vapor deposition using aminosilane and silazane precursors. 1:Deposition mechanism, chemical structure and surface morphology
Plasma Process. Polym. 2021, e2000240, 1-19

P. Uznanski, B. Glebocki, A. Walkiewicz-Pietrzykowska, J. Zakrzewska, A. M. Wrobel, J. Tyczkowski, .J. Balcerzak
Surface modification of silicon oxycarbide films produced by remote hydrogen microwave plasma chemical vapour deposition from tetramethyldisiloxane precursor
Surf. Coat. Technol. 2018, 350, 686-698.

 M. Wrobel, P. Uznanski, A. Walkiewicz-Pietrzykowska, K. Jankowski
Amorphous silicon carbonitride thin film coatings produced by remote nitrogen microwave plasma chemical vapor deposition using organosilicon precursor
Appl. Organometal. Chem. 2017, e3871, 1-12.

Walkiewicz-Pietrzykowska, P. Uznanski, A. M. Wrobel
Silicon carbide, silicon carbonitride, and silicon oxycarbide thin films formed by remote hydrogen microwave plasma CVD
Current Org. Chem., 2017, 21, 2229-2239.

M. Wrobel, P. Uznanski, A. Walkiewicz-Pietrzykowska,
Silicon oxycarbide films produced by remote microwave hydrogen plasma CVD using a tetramethyldisiloxane precursor: Growth kinetics, structure, surface morphology, and properties
Chem. Vap. Deposition, 2015, 21, 307–318.

M. Wrobel, P.Uznanski, A. Walkiewicz-Pietrzykowska, B. Glebocki, E. Bryszewska
Silicon oxycarbide thin films by remote microwave hydrogen plasma CVD using a tetramethyldisiloxane precursor
Chem. Vap. Deposition, 2015, 21, 88–93.

M. Wrobel, A. Walkiewicz-Pietrzykowska, P. Uznanski
Thin a-SiC:H films formed by remote hydrogen microwave plasma CVD using dimethylsilane and trimethylsilane precursors
Chem. Vap. Deposition, 2014, 20, 112–117.

M. Wrobel, A. Walkiewicz-Pietrzykowska, P. Uznanski
Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. Growth mechanism and chemical structure of deposited a-SiC:H films,
Thin Solid Films,2014, 564, 222-231.

M. Wrobel, A. Walkiewicz-Pietrzykowska, P. Uznanski
Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. Surface morphology and properties of deposited a-SiC:H films,
Thin Solid Films,2014, 564, 232–240.

M. Wrobel, A. Walkiewicz-Pietrzykowska, P. Uznanski, B. Glebocki
a-SiC:H Films by remote hydrogen microwave plasma CVD from etthylsilane precursors
Chem. Vap. Deposition,2013, 19, 242–350.

M. Wrobel, A. Walkiewicz-Pietrzykowska, P. Uznanski, B. Glebocki
Hard a-SiC:H films formed by remote hydrogen microwave plasma chemical vapor deposition using a novel single-source precursor
Thin Solid Films,2012, 520, 7100–7108.

M. Wrobel, A. Walkiewicz-Pietrzykowska, P. Uznanski, B. Glebocki
Amorphous hydrogenated silicon carbide (a-SiC:H) coatings produced by remote hydrogen microwave plasma CVD from bis(dimethylsilyl)ethane – a novel single-source precursor
Chem. Vap. Deposition,2011, 17, 186–190.

M. Wrobel, I. Blaszczyk-Lezak, P. Uznanski, B. Glebocki
Remote hydrogen microwave plasma chemical vapor deposition of amorphous silicon carbonitride (a-SiCN) coatings derived from tris(dimethylamino)silane
Plasma Process. Polym.2011, 8, 542-556.

M. Wrobel, I. Blaszczyk-Lezak, P. Uznanski, B. Glebocki
Silicon carbonitride (SiCN) films by remote hydrogenmMicrowave plasma CVD from tris(dimethylamino)silane as novel single-source precursor
Chem. Vap. Deposition,2010, 16, 211–215.

A. M. Wrobel, A. Walkiewicz-Pietrzykowska, I. Blaszczyk-Lezak
Reactivity of organosilicon precursors in remote hydrogen microwave plasma chemical vapor deposition of silicon carbide and silicon carbonitride thin-film coatings
Appl. Organomet. Chem. 2010, 24, 201-207.

 

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